2. 30? 0. 05 1. 25? 0. 05 1 . 3 0 ? 0 . 0 3 0 . 3 0 2 . 0 0 ? 0 . 0 5 1 . 0 1 r e f MMST2907A transistor (pnp) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm: -0.6 a collector-base voltage v (br) cbo : -60 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= -10 a, i e =0 -60 v collector-emitter breakdown voltage v (br)ceo ic= -10ma, i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e = -10 a, i c =0 -5 v collector cut-off current i cbo v cb = -50v, i e =0 -0.01 a collector cut-off current i ceo v ce = -35v, i b =0 -0.05 a emitter cut-off current i ebo v eb = -3v, i c =0 -0.01 a h fe(1) v ce =-10v, i c = -150ma 100 300 dc current gain h fe(2) v ce = -10v, i c =-1ma 100 collector-emitter saturation voltage v ce (sat) i c =-500 ma, i b = -50ma -0.6 v base-emitter saturation voltage v be (sat) i c = -500 ma, i b = -50ma -1.2 v transition frequency f t v ce = -20v, i c = -50ma f= 100mhz 200 mhz output capacitance c ob v cb =-10v, i e = 0 f= 1mhz 8 pf delay time t d 10 ns rise time t r v cc =-30v, i c =-150ma v be(off) =-0.5v, i b1 =-15ma 25 ns storage time t s 80 ns fall time t f v cc =-30v, i c =-150ma i b1 = i b2 = -15ma 30 ns marking: k3f unit: mm sot-323 1. base 2. emitter 3. collector MMST2907A http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
|
